CZT122 NPN

CZT127 PNP

SURFACE MOUNT

COMPLEMENTARY SILICON

POWER DARLINGTON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZT122, CZT127

types are Complementary Silicon Power Darlington

Transistors manufactured in a surface mount package

designed for low speed switching and amplifier

applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

5.0

A

Peak Collector Current

ICM

8.0

A

Continuous Base Current

IB

120

mA

Power Dissipation

PD

2.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

62.5

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEO

VCE=50V

500

µA

ICBO

VCB=100V

200

µA

IEBO

VEB=5.0V

2.0

mA

BVCEO

IC=30mA

100

V

VCE(SAT)

IC=3.0A, IB=12mA

2.0

V

VCE(SAT)

IC=5.0A, IB=20mA

4.0

V

VBE(ON)

VCE=3.0V, IC=3.0A

2.5

V

hFE

VCE=3.0V, IC=500mA

1000

hFE

VCE=3.0V, IC=3.0A

1000

fT

VCE=4.0V, IC=3.0A, f=1.0MHz

4.0

MHz

Cob

VCB=10V, IE=0, f=1.0MHz (CZT122)

200

pF

Cob

VCB=10V, IE=0, f=1.0MHz (CZT127)

300

pF

SOT-223 CASE

SOT-223 CASE

R4 (1-March 2010)

www.centra lsemi.com