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FZT968 数据表(PDF) 1 Page - Diodes Incorporated |
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FZT968 数据表(HTML) 1 Page - Diodes Incorporated |
1 / 2 page SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR ISSUE 3 OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A * 6 Amps continuous current (Up to 20 Amps peak ) * High gain and very low saturation voltage PARTMARKING DETAIL FZT968 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -20 A Continuous Collector Current IC -6 A Power Dissipation at Tamb=25°C Ptot 3W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO -15 -28 V IC=-100µA V(BR)CEO -12 -20 V IC=-10mA* V(BR)EBO -6 -8 V IE=-100µA Collector Cut-Off Current ICBO -10 -1.0 nA µ A VCB=-12V VCB=-12V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -65 -132 -360 -130 -170 -450 mV mV mV IC=-500mA, IB=-5mA* IC=-2A, IB=-50mA* IC=-6A, IB=-250mA* Base-Emitter Saturation Voltage VBE(sat) -1050 -1200 mV IC=-6A, IB=-250mA* Base-Emitter Turn-On Voltage VBE(on) -870 -1050 mV IC=-6A, VCE=-1V* Static Forward Current Transfer Ratio hFE 300 300 200 150 450 450 300 240 50 1000 IC=-10mA, VCE=-1V* IC=-500mA, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* IC=-20A, VCE=-1V* Transition Frequency fT 80 MHz IC=-100mA, VCE=-10V f=50MHz Output Capacitance Cobo 161 pF VCB=-20V, f=1MHz Switching Times ton toff 120 116 ns ns IC=-4A, IB1=-400mA IB2=400mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 294 FZT968 C C E B 1m 100 1m 100 1m 100 0.1 100 100 1m IC - Collector Current (A) VCE(sat) v IC 0 0.4 0.8 +25 °C -55 °C 800 400 +100 °C 0 IC - Collector Current (A) hFE v IC +25 °C +100 °C 1.4 0.7 -55 °C 0 IC - Collector Current (A) VBE(on) v IC +25 °C -55 °C +100 °C IC - Collector Current (A) VCE(sat) v IC +100 °C +25 °C 0 IC - Collector Current (A) VBE(sat) v IC 1s 100ms 100 DC 0.1 VCE - Collector Emitter Voltage (V) Safe Operating Area 10ms 1ms 100µs V+-=1V +25 °C I+/I*=50 V+-=1V -55 °C I+/I*=50 10m 100m 1 10 0.2 0.6 I+/I*=10 I+/I*=50 I+/I*=100 I+/I*=200 I+/I*=250 0.8 0.6 0.4 0.2 0 1m 10m 100m 1 10 100 10m 100m 1 10 200 600 10m 100m 1 10 0.4 0.8 1.2 1.6 10m 100m 1 10 110 1 10 TYPICAL CHARACTERISTICS 3 - 295 FZT968 |
类似零件编号 - FZT968_15 |
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类似说明 - FZT968_15 |
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