STK600 datasheet(2/7 Pages) SAMHOP

部件名	STK600

功能描述	Super high dense cell design for low RDS(ON).

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制造商	SAMHOP [SamHop Microelectronics Corp.]

网页	http://www.samhop.com.tw

标志

2 / 7 page

Symbol

Min

Typ

Max

Units

BVDSS

60

V

1

IGSS

±10

uA

VGS(th)

V

0.70

gFS

S

CISS

43

pF

COSS

17

pF

CRSS

8.8

pF

Qg

6.3

nC

8.6

42

11

tD(ON)

1.56

ns

tr

ns

tD(OFF)

ns

tf

ns

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=30V

ID=0.40A

VGS=10V

RGEN=6ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

ohm

VGS=10V , ID=0.40A

VDS=10V , ID=0.40A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

uA

Gate Threshold Voltage

VDS=VGS ,ID=250uA

VDS=48V , VGS=0V

VGS=±20V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=0.34A

0.90

0.95

1.3

ohm

c

f=1.0MHz

c

www.samhop.com.tw

Mar,29,2011

2

nC

Qgs

nC

Qgd

0.36

0.61

Gate-Drain Charge

Gate-Source Charge

VDS=30V,ID=0.40A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

nC

1.1

VDS=30V,ID=0.40A,VGS=10V

VDS=30V,ID=0.40A,VGS=4.5V

VSD

Diode Forward Voltage

VGS=0V,IS=0.1A

0.81

1.3

V

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)

_

1

1.9

3

0.9

STK600

Ver 1.0

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