BCWDLT1 datasheet(1/6 Pages) LRC

部件名	BCWDLT1

功能描述	General Purpose Transistors(NPN Silicon)

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制造商	LRC [Leshan Radio Company]

网页	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

M9–1/6

1

3

2

General Purpose Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

32

Vdc

Collector–Base Voltage

V CBO

32

Vdc

Emitter–Base Voltage

V EBO

5.0

Vdc

Collector Current — Continuous

I C

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

PD

225

mW

TA = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation

PD

300

mW

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ , Tstg

–55 to +150

°C

DEVICE MARKING

BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 2.0mAdc, IE = 0 )

V (BR)CEO

32

—

Vdc

Emitter–Base Breakdown Voltage

(I E= 1.0

µAdc, I

C = 0)

V (BR)EBO

5.0

—

Vdc

Collector Cutoff Current

I CES

(VCE = 32 Vdc, )

—

20

nAdc

(VCE = 32 Vdc, TA = 150°C)

—

20

µAdc

Emitter Cutoff Current

(I EB= 4.0 Vdc, I C = 0)

I EBO

—

20

nAdc

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

BCW60ALT1

BCW60BLT1

BCW60DLT1

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

2

EMITTER

3

COLLECTOR

1

BASE

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