STBP440S datasheet(3/8 Pages) SAMHOP

部件名	STBP440S

功能描述	Super high dense cell design for extremely low RDS(ON).

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制造商	SAMHOP [SamHop Microelectronics Corp.]

网页	http://www.samhop.com.tw

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3 / 8 page

T j( C )

STB/P440S

www.samhop.com.tw

Apr,13,2009

3

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current (A)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Tj, Junction Temperature ( C )

Figure 4. On-Resistance Variation with

Drain Current and Temperature

Tj, Junction Temperature ( C )

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature ( C )

Figure 6. Breakdown Voltage Variation

with Temperature

100

80

60

40

20

0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =4V

VGS =3.5V

VGS =4.5V

VGS =10V

15

12

9

6

3

0

0.7

4.2

3.5

2.8

2.1

1.4

T j=125 C

25 C

-55 C

24

20

16

12

8

4

1

20

40

60

80

100

V GS =10V

V GS =4.5V

2.0

1.8

1.6

1.4

1.2

1.0

0

100

75

25

50

125

150

V G S =4.5V

ID=25A

V G S =10V

ID=30A

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

75

50

25

0

-25

-50

V DS =V GS

ID=250uA

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

75

50

25

0

-25

-50

ID=250uA

Ver 1.0

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