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TSG25N120CN 数据表(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TSG25N120CN 数据表(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
3 / 9 page TSG25N120CN N-Channel IGBT with FRD. 3/9 Version: B12 Electrical Specifications of the DIODE (Tc=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Diode Forward Voltage IF = 25A, TJ=25 oC VFM -- 2.0 2.5 V TJ=125 oC -- 2.18 -- V Reverse Recovery Time IF = 25A, dl/dt=200A/us TJ=25 oC tfr -- 300 480 ns TJ=125 oC -- 360 -- Reverse Recovery Current TJ=25 oC Ifr -- 27 41 A TJ=125 oC -- 31 -- Reverse Recovery Charge TJ=25 oC Qfr -- 4000 6000 nC TJ=125 oC -- 5580 -- |
类似零件编号 - TSG25N120CN |
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类似说明 - TSG25N120CN |
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