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SB10H150CT-1 数据表(PDF) 1 Page - Vishay Siliconix |
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SB10H150CT-1 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 6 page MBR10H150CT, MBRF10H150CT, SB10H150CT-1 www.vishay.com Vishay General Semiconductor Revision: 21-Nov-12 1 Document Number: 88779 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 μA FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max.10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, and polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA Molding compound meets UL 94V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 5 A VRRM 150 V IFSM 160 A VF 0.72 V TJ max. 175 °C ITO-220AB TO-262AA MBR10H150CT MBRF10H150CT SB10H150CT-1 CASE PIN 2 PIN 1 PIN 3 TO-220AB 1 2 3 1 2 3 1 2 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR10H150CT UNIT Maximum repetitive peak reverse voltage VRRM 150 V Working peak reverse voltage VRWM 150 V Maximum DC blocking voltage VDC 150 V Maximum average forward rectified current (Fig.1) total device IF(AV) 10 A per diode 5 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 160 A Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 1.0 A Peak non-repetitive reverse surge energy per diode (8/20 waveform) ERSM 10 mJ Non-repetitve avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH EAS 11.25 mJ Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min VAC 1500 V |
类似零件编号 - SB10H150CT-1 |
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类似说明 - SB10H150CT-1 |
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