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PD16823 数据表(PDF) 7 Page - Renesas Technology Corp |
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PD16823 数据表(HTML) 7 Page - Renesas Technology Corp |
7 / 10 page The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Note It is recommended to connect an external capacitor of 1 to 10 µF between VM and GND to protect the gate of the D MOS FET from voltage surge. DC-DC converter CPU OSC CIRCUIT CHARGE PUMP CIRCUIT CONTROL CIRCUIT LEVEL SHIFT CIRCUIT D MOS FET H BRIDGE CIRCUIT (1.5 circuits) Battery VM = 0.5 to 7.5 V VDD = 3.0 to 6.0 V STBY 18 IN1 10 IN2 8 IN3 9 VDD 7 23 C1 20 1 C2 19 C3 VG 6 VM 19 VM C4Note 1 to 10 F µ 15 OUT1 5 OUT2 17 OUT3 M M PD16823GS µ Pull-down resistor: 50 k Ω TYP. 12 DGND 14, 16 PGND C1 = C2 = C3 = 10 nF IN1 IN2 IN3 L H L L H H H L L H H 1CH Forward mode 1CH Reverse mode 1CH Brake mode 2CH Forward mode 2CH Reverse mode 2CH Brake mode |
类似零件编号 - PD16823_15 |
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类似说明 - PD16823_15 |
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