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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

Doubler

13.5-17.0/27.0-34.0 GHz

XX1007-BD

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Rev. V1

Features

 Integrated Gain, Doubler and Driver Stages

 Self-biased Architecture

 +21.0 dBm Output Saturated Power

 40.0 dBc Fundamental Suppression

 On-Chip ESD Protection

 100% On-Wafer RF, DC & Output Power Testing

 100% Visual Inspection to MIL-STD-883

Method 2010

 RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM Tech’s 13.5-17.0 / 27.0-34.0 GHz GaAs

MMIC doubler integrates a gain stage, passive

doubler and driver amplifier onto a single device.

The XX1007-BD has a self-biased architecture

requiring a single positive supply (+5V) only and

integrated on-chip bypassing capacitor eliminating

the need for external capacitor. This MMIC uses M/A

-COM

Tech’s

GaAs

PHEMT

device

model

technology, and is based upon electron beam

lithography to

ensure

high

repeatability

and

uniformity. The chip has integrated ESD structures

for protection and surface passivation to protect and

provide a rugged part with backside via holes and

gold metallization to allow either a conductive epoxy

or eutectic solder die attach process. This device is

well suited for Millimeter wave Point-to-Point Radio,

LMDS, SATCOM and VSAT applications.

Ordering Information

Part Number

Package

XX1007-BD-000V

“V” - vacuum release

gel paks

XX1007-BD-EV1

evaluation module

Functional Block Diagram

Absolute Maximum Ratings

Parameter

Absolute Max.

Supply Voltage (Vd)

+6.0 VDC

Supply Current (Id)

300 mA

Gate Bias Voltage (Vg)

+0.3 VDC

Input Power (RF Pin)

TBD

Storage Temperature (Tstg)

-65 to +165 ºC

Operating Temperature (Ta)

Channel Temperature (Tch)

(1)

Channel temperature directly affects a device's MTTF. It is recom-

mended to keep channel temperature as low as possible to maximize

lifetime.

X2

RF IN

Vd

RF OUT