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PD166010 数据表(PDF) 5 Page - Renesas Technology Corp

部件名 PD166010
功能描述  SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE
Download  27 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

PD166010 数据表(HTML) 5 Page - Renesas Technology Corp

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Data Sheet S19689EJ2V0DS
3
μPD166010
ABSOLUTE MAXIMUM RATING (Ta = 25
°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Rating
Unit
VCC voltage
VCC1
28
V
VCC voltage (Load Dump)
VCC2
RI = 1
Ω, RL = 1.5 Ω, td = 400 ms,
RIS = 1 k
Ω, IN = low or high
40
V
VCC voltage (Reverse polarity)
-VCC
RL = 2.2
Ω, 1 minute
−16
V
Load current
IL
DC, TC = 25
°C
30
A
Load current (short circuit
current)
IL(SC)
Self Limited
A
Power dissipation
PD
TC = 25
°C
59
W
Inductive load switch-off energy
dissipation single pulse
EAS1
IL = 10 A, VCC = 12 V, Tch,start
≤ 150°C,
refer to page 16
50
mJ
Maximum allowable energy
under over load condition
(Single pulse)
EAS2
VCC = 18 V, Tch,start
≤ 150°C, Rsupply = 10 mΩ,
Rshort = 50 m
Ω, Lsupply = 5
μH, Lshort = 15 μH,
refer to page 16
105
mJ
Channel temperature
Tch
−40 to +150
°C
Storage temperature
Tstg
−55 to +150
°C
HBM
AEC-Q100-002 std.
R = 1.5 k
Ω, C = 100pF
2000
V
Electric discharge capability
VESD
MM
AEC-Q100-003 std.
R = 0
Ω, C = 200pF
400
V
DC
VCC
−28 V
V
Voltage of IN pin
VIN
Reverse polarity condition, 1 minute
VCC+14 V
V
DC
VCC
−28 V
V
Voltage of IS pin
VIS
Reverse polarity condition, 1 minute
VCC+14 V
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Power supply voltage
VCC
Tch =
−40 to 150°C
8
18
V
Cautions 1. It is assumed that VIN = 0 V when the device is activated.
2. Device operating range is limited by energy dissipation capability of the driver. User must
carefully consider worst case load and current conditions in combination of operating voltage.
THERMAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Rth(ch-a)
Device on 50 mm x 50 mm x 1.5 mmt
epoxy PCB FR-4 with 6 cm
2 of 70
μm
copper area
45
55
°C/W
Thermal resistance
Rth(ch-c)
3.17
°C/W


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