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STESD05C 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STESD05C 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 2 page Elektronische Bauelemente STESD05C Plastic Encapsulate ESD Protection Diodes 15-May-2014 Rev. C Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted.) PARAMETER SYMBOL MIN TYP MAX UNIT Working Peak Reverse Voltage VRWM - - 5.0 V Maximum Reverse Leakage Current @ VRWM IR - - 1.0 μA Breakdown Voltage @ IT (Note2) VBR 5.8 - 8.8 V Test Current IT - - 1.0 mA Maximum Reverse Peak Pulse Current (Note3) IPP - - 11.2 A Clamping Voltage @ IPP (Note3) VC - - 12.5 V Max. Capacitance @ VR =0 and f =1MHz C - - 30 pF 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. Test by Tp = 8 / 20 us pulse waveform. |
类似零件编号 - STESD05C_15 |
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类似说明 - STESD05C_15 |
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