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IRL630S 数据表(PDF) 1 Page - International Rectifier |
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IRL630S 数据表(HTML) 1 Page - International Rectifier |
1 / 8 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0V 9.0 ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0V 5.7 A IDM Pulsed Drain Current 36 PD @TC = 25°C Power Dissipation 74 PD @TC = 25°C Power Dissipation (PCB Mount)** 3.1 Linear Derating Factor 0.59 Linear Derating Factor (PCB Mount)** 0.025 VGS Gate-to-Source Voltage ±10 V EAS Single Pulse Avalanche Energy 250 mJ IAR Avalanche Current 9.0 A EAR Repetitive Avalanche Energy 7.4 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 Soldering Temperature, for 10 seconds 300 (1.6mm from case) IRL630S HEXFET® Power MOSFET PD - 9.1254 Revision 0 VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Absolute Maximum Ratings Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-Case –––– –––– 1.7 RθJA Junction-to-Ambient (PCB Mount)** –––– –––– 40 °C/W RθJA Junction-to-Ambient –––– –––– 62 ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. W/°C W °C Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V 150°C Operating Temperature Description SMD-220 Next Data Sheet Index Previous Datasheet To Order |
类似零件编号 - IRL630S |
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类似说明 - IRL630S |
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