IRL630S datasheet(7/8 Pages) IRF

部件名	IRL630S

功能描述	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

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制造商	IRF [International Rectifier]

网页	http://www.irf.com

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IRL630S

Fig 14. For N-Channel HEXFETS

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

RG

VDD

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• I

SD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

*

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类似零件编号 - IRL630S

制造商	部件名	数据表	功能描述
International Rectifier	IRL630	324Kb / 8P	Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)
	IRF630	176Kb / 6P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
	IRC	229Kb / 8P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
	IRFI630G	176Kb / 6P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
	IRLI630G	337Kb / 8P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)
	IRHN7230	513Kb / 14P	TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)
	IRF630PBF	2Mb / 8P	HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )
	IRF630SPBF	986Kb / 8P	HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )
	IRFPC60	162Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=0.40ohm, Id=16A)
	IRFP450LC	340Kb / 8P	Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)