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2SJ351 数据表(PDF) 4 Page - Renesas Technology Corp |
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2SJ351 数据表(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SJ351, 2SJ352 Rev.2.00 Sep 07, 2005 page 2 of 5 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit 2SJ351 –180 Drain to source voltage 2SJ352 VDSX –200 V Gate to source voltage VGSS ±20 V Drain current ID –8 A Body to drain diode reverse drain current IDR –8 A Channel dissipation Pch Note 1 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at Tc = 25 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions 2SJ351 –180 — — V Drain to source breakdown voltage 2SJ352 V (BR) DSX –200 — — V ID = –10 mA, VGS = 10 V Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source cutoff voltage VGS (off) –0.15 — –1.45 V ID = –100 mA, VDS = –10 V Drain to source saturation voltage VDS (sat) — — –12 V ID = –8 A, VGS = 0 Note 2 Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = –3 A, VDS = –10 V Note 2 Input capacitance Ciss — 800 — pF Output capacitance Coss — 1000 — pF Reverse transfer capacitance Crss — 18 — pF VGS = 5 V, VDS = –10 V, f = 1 MHz Turn-on time ton — 320 — ns Turn-off time toff — 120 — ns VDD = –30 V ID = –4 A Note: 2. Pulse test |
类似零件编号 - 2SJ351_15 |
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类似说明 - 2SJ351_15 |
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