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N0400P-ZK-E1-AYNote 数据表(PDF) 7 Page - Renesas Technology Corp |
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N0400P-ZK-E1-AYNote 数据表(HTML) 7 Page - Renesas Technology Corp |
7 / 9 page N0400P Chapter Title R07DS0500EJ0200 Rev.2.00 Page 7 of 7 Aug 19, 2011 Package Drawings (Unit: mm) TO-252 (MP-3ZK) 6.5 ±0.2 2.3 ±0.1 0.5 ±0.1 0.76 ±0.12 0 to 0.25 0.5 ±0.1 1.0 No Plating No Plating 5.1 TYP. 4.3 MIN. 1 4 23 1.14 MAX. 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) Equivalent Circuit Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
类似零件编号 - N0400P-ZK-E1-AYNote |
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类似说明 - N0400P-ZK-E1-AYNote |
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