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IRFP23N50L 数据表(PDF) 2 Page - International Rectifier |
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IRFP23N50L 数据表(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFP23N50L 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 12 ––– ––– SVDS = 50V, ID = 14A Qg Total Gate Charge ––– ––– 150 ID = 23A Qgs Gate-to-Source Charge ––– ––– 44 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 72 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 26 ––– VDD = 250V tr Rise Time ––– 94 ––– ID = 23A td(off) Turn-Off Delay Time ––– 53 ––– RG = 6.0Ω tf Fall Time ––– 45 ––– VGS = 10V,See Fig. 10 Ciss Input Capacitance ––– 3600 ––– VGS = 0V Coss Output Capacitance ––– 380 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 37 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 4800 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 100 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 220 ––– VGS = 0V, VDS = 0V to 400V Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.190 0.235 Ω VGS = 10V, ID = 14A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA ––– ––– 50 µA VDS = 500V, VGS = 0V ––– ––– 2VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) I SD ≤ 23A, di/dt ≤ 430A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting T J = 25°C, L = 1.5mH, RG = 25Ω, IAS = 23A, dv/dt = 14V/ns (See Figure 12a) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Avalanche Characteristics Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 410 mJ IAR Avalanche Current ––– 23 A EAR Repetitive Avalanche Energy ––– 37 mJ Symbol Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.34 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance |
类似零件编号 - IRFP23N50L |
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类似说明 - IRFP23N50L |
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