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IRFBA90N20 数据表(PDF) 1 Page - International Rectifier

部件名 IRFBA90N20
功能描述  Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRFBA90N20 数据表(HTML) 1 Page - International Rectifier

  IRFBA90N20 Datasheet HTML 1Page - International Rectifier IRFBA90N20 Datasheet HTML 2Page - International Rectifier IRFBA90N20 Datasheet HTML 3Page - International Rectifier IRFBA90N20 Datasheet HTML 4Page - International Rectifier IRFBA90N20 Datasheet HTML 5Page - International Rectifier IRFBA90N20 Datasheet HTML 6Page - International Rectifier IRFBA90N20 Datasheet HTML 7Page - International Rectifier IRFBA90N20 Datasheet HTML 8Page - International Rectifier  
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Notes
 through † are on page 8
www.irf.com
1
09/06/01
IRFBA90N20D
SMPS MOSFET
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
200V
0.023
Ω
98A†
PD - 94300
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
98
†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
71
†
A
IDM
Pulsed Drain Current

390
PD @TC = 25°C
Power Dissipation
650
W
Linear Derating Factor
4.3
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
ƒ
6.3
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Recommended Clip Force
20
N
Absolute Maximum Ratings
l High frequency DC-DC converters
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Super-220™
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.23
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
58


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