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IRFBA1405P 数据表(PDF) 8 Page - International Rectifier

部件名 IRFBA1405P
功能描述  Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A??
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRFBA1405P 数据表(HTML) 8 Page - International Rectifier

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IRFBA1405P
8
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Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by R
G
• I
SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

* Reverse Polarity of D.U.T for P-Channel
VGS
[
]
[
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[
] ***
Fig 17. For N-channel HEXFET® power MOSFETs


类似零件编号 - IRFBA1405P

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