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IRFB31N20D 数据表(PDF) 1 Page - International Rectifier |
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IRFB31N20D 数据表(HTML) 1 Page - International Rectifier |
1 / 11 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A IDM Pulsed Drain Current 124 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 200 Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 2.1 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) www.irf.com 1 2/14/00 IRFB31N20D IRFS31N20D IRFSL31N20D SMPS MOSFET HEXFET® Power MOSFET l High frequency DC-DC converters Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max ID 200V 0.082 Ω 31A Typical SMPS Topologies l Telecom 48V Input Forward Converters Absolute Maximum Ratings Notes through are on page 11 D2Pak IRFS31N20D TO-220AB IRFB31N20D TO-262 IRFSL31N20D PD- 93805B |
类似零件编号 - IRFB31N20D |
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类似说明 - IRFB31N20D |
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