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IRLU9343 数据表(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRLU9343 数据表(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 10 page Features l Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Multiple Package Options S D G VDS -55 V RDS(ON) typ. @ VGS = -10V 93 m : RDS(ON) typ. @ VGS = -4.5V 150 m : Qg typ. 31 nC TJ max 175 °C Key Parameters IRLR9343 IRLU9343 IRLU9343-701 D-Pak IRLR9343 I-Pak IRLU9343 Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ -10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Power Dissipation W PD @TC = 100°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Clamping Pressure h N Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case g ––– 1.9 RθJA Junction-to-Ambient (PCB Mounted) gj ––– 50 °C/W RθJA Junction-to-Ambient (free air) g ––– 110 Max. -14 -60 ±20 -55 -20 -40 to + 175 ––– 79 39 0.53 2014-8-16 1 www.kersemi.com |
类似零件编号 - IRLU9343 |
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类似说明 - IRLU9343 |
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