IRF9540N datasheet(1/8 Pages) IRF

部件名	IRF9540N

功能描述	Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

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制造商	IRF [International Rectifier]

网页	http://www.irf.com

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IRF9540N

HEXFET® Power MOSFET

PD - 91437B

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ -10V

-23

ID @ TC = 100°C

Continuous Drain Current, VGS @ -10V

-16

A

IDM

Pulsed Drain Current

-76

PD @TC = 25°C

Power Dissipation

140

W

Linear Derating Factor

0.91

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

430

mJ

IAR

Avalanche Current

-11

A

EAR

Repetitive Avalanche Energy

14

mJ

dv/dt

Peak Diode Recovery dv/dt

-5.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

1.1

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

Thermal Resistance

VDSS = -100V

RDS(on) = 0.117Ω

ID = -23A

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l P-Channel

l Fully Avalanche Rated

5/13/98

S

D

G

TO-220AB

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

类似零件编号 - IRF9540N

制造商	部件名	数据表	功能描述
Kersemi Electronic Co.,...	IRF9540N	738Kb / 8P	Advanced Process Technology
Inchange Semiconductor ...	IRF9540N	334Kb / 2P	P-Channel MOSFET Transistor
International Rectifier	IRF9540NL	187Kb / 10P	Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Kersemi Electronic Co.,...	IRF9540NL	1Mb / 10P	Advanced Process Technology
Inchange Semiconductor ...	IRF9540NL	273Kb / 2P	isc P-Channel MOSFET Transistor

More results

类似说明 - IRF9540N

制造商	部件名	数据表	功能描述
International Rectifier	IRFP9140N	142Kb / 8P	Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
	IRF9540NS	187Kb / 10P	Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
	IRF5NJ9540	117Kb / 7P	POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
	IRF5Y9540CM	105Kb / 7P	POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
	IRF5EA1310	238Kb / 7P	POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A)
	IRF9540NSPBF	331Kb / 11P	HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A )
	IRFP360	164Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)
	IRFP254N	222Kb / 8P	Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)
	IRFP360LC	343Kb / 8P	Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)
	IRFP23N50L	104Kb / 8P	Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A)

More results

IRF9540N 数据表(PDF) 1 Page - International Rectifier

IRF9540N 数据表(HTML) 1 Page - International Rectifier

类似零件编号 - IRF9540N

类似说明 - IRF9540N

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IRF9540N 数据表(PDF) 1 Page - International Rectifier

IRF9540N 数据表(HTML) 1 Page - International Rectifier

类似零件编号 - IRF9540N

类似说明 - IRF9540N

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数据表 下载

链接网址

数据表下载