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NE3511S02-T1D 数据表(PDF) 4 Page - Renesas Technology Corp |
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NE3511S02-T1D 数据表(HTML) 4 Page - Renesas Technology Corp |
4 / 11 page Data Sheet PG10642EJ01V0DS 2 NE3511S02 RECOMMENDED OPERATING CONDITIONS (TA = +25 °C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 1 2 3 V Drain Current ID 5 10 20 mA Input Power Pin − − 0 dBm ELECTRICAL CHARACTERISTICS (TA = +25 °C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = −3 V − 0.5 10 μA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 20 40 70 mA Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100 μA −0.2 −0.7 −1.7 V Transconductance gm VDS = 2 V, ID = 10 mA 50 65 − mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz − 0.30 0.45 dB Associated Gain Ga 12.5 13.5 − dB |
类似零件编号 - NE3511S02-T1D |
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类似说明 - NE3511S02-T1D |
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