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IRF7467 数据表(PDF) 1 Page - International Rectifier |
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IRF7467 数据表(HTML) 1 Page - International Rectifier |
1 / 8 page IRF7467 SMPS MOSFET Notes through are on page 8 Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 11 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.0 A IDM Pulsed Drain Current 90 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C HEXFET® Power MOSFET l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use Benefits Applications VDSS RDS(on) max ID 30V 12m Ω 11A www.irf.com 1 3/25/01 l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current SO-8 To p V ie w 8 1 2 3 4 5 6 7 D D D D G S A S S A Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W Thermal Resistance l High Frequency Buck Converters for Computer Processor Power PD - 93883B |
类似零件编号 - IRF7467 |
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类似说明 - IRF7467 |
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