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IRF630N 数据表(PDF) 2 Page - International Rectifier

部件名 IRF630N
功能描述  Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF630N 数据表(HTML) 2 Page - International Rectifier

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IRF630N/S/L
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 5.4A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
117
176
ns
TJ = 25°C, IF = 5.4A
Qrr
Reverse Recovery Charge
–––
542
813
nC
di/dt = 100A/µs
ƒ
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
9.3
37
A
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.26
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.30
VGS = 10V, ID = 5.4A
ƒ
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
4.9
–––
–––
S
VDS = 50V, ID = 5.4A
ƒ
–––
–––
25
µA
VDS = 200V, VGS = 0V
–––
–––
250
VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
35
ID = 5.4A
Qgs
Gate-to-Source Charge
–––
–––
6.5
nC
VDS = 160V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
17
VGS = 10V
ƒ
td(on)
Turn-On Delay Time
–––
7.9
–––
VDD = 100V
tr
Rise Time
–––
14
–––
ID = 5.4A
td(off)
Turn-Off Delay Time
–––
27
–––
RG = 13Ω
tf
Fall Time
–––
15
–––
RD = 18Ω
ƒ
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
575
–––
VGS = 0V
Coss
Output Capacitance
–––
89
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
25
–––
pF
ƒ = 1.0MHz
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.83
RθCS
Case-to-Sink, Flat, Greased Surface
„
0.50
–––
°C/W
RθJA
Junction-to-Ambient
„
–––
62
RθJA
Junction-to-Ambient (PCB mount)
…
–––
40


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