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IRF5NJ5305 数据表(PDF) 2 Page - International Rectifier

部件名 IRF5NJ5305
功能描述  POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-22A*)
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF5NJ5305 数据表(HTML) 2 Page - International Rectifier

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IRF5NJ5305
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-55
V
VGS = 0V, ID = -250µA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
-0.049
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.065
VGS = 10V, ID = -16A
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
8.0
S ( )VDS = -25V, IDS = -16A ➃
IDSS
Zero Gate Voltage Drain Current
-25
VDS = -55V ,VGS=0V
-250
VDS = -44V,
VGS = 0V, TJ =125°C
IGSS
Gate-to-Source Leakage Forward
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
100
VGS = 20V
Qg
Total Gate Charge
70
VGS =-10V, ID = -16A
Qgs
Gate-to-Source Charge
17
nC
VDS = -44V
Qgd
Gate-to-Drain (‘Miller’) Charge
30
td(on)
Turn-On Delay Time
26
VDD = -28V, ID = -16A,
tr
Rise Time
125
RG = 6.8Ω
td(off)
Turn-Off Delay Time
56
tf
Fall Time
74
LS + LD
Total Inductance
4.0
Measured from the center of
drain pad to center of source pad
Ciss
Input Capacitance
1290
VGS = 0V, VDS = -25V
Coss
Output Capacitance
495
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
203
nA
nH
ns
µA
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
1.67
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
-22*
ISM
Pulse Source Current (Body Diode) ➀
-88
VSD
Diode Forward Voltage
-1.3
V
Tj = 25°C, IS = -16A, VGS = 0V ➃
trr
Reverse Recovery Time
100
ns
Tj = 25°C, IF = -16A, di/dt ≥ 100A/µs
QRR Reverse Recovery Charge
250
nC
VDD ≤ -30V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by package


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