IRFB4212 datasheet(6/7 Pages) KERSEMI

部件名	IRFB4212

功能描述	Key parameters optimized for Class-D audio amplifier applications

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制造商	KERSEMI [Kersemi Electronic Co., Ltd.]

网页	http://www.kersemi.com

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Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

V

GS

V

DS

90%

10%

t

d(on)

t

d(off)

t

r

t

f

V

GS

Pulse Width < 1µs

Duty Factor < 0.1%

V

DD

V

DS

L

D

D.U.T

+

-

Fig 17b. Unclamped Inductive Waveforms

Fig 17a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

VGS

Fig 19a. Gate Charge Test Circuit

Fig 19b Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 16.

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

1K

VCC

DUT

0

L

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

+

-

+

-

RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Inductor Current

IRFB4212PBF

2014-8-9

6

www.kersemi.com

类似零件编号 - IRFB4212

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IRFB4212 数据表(PDF) 6 Page - Kersemi Electronic Co., Ltd.

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IRFB4212 数据表(PDF) 6 Page - Kersemi Electronic Co., Ltd.

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