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SILICON POWER TRANSISTOR

2SD1899-Z

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No. D18293EJ4V0DS00 (4th edition)

Date Published December 2007 NS

Printed in Japan

1986, 2006

The mark <R> shows major revised points.

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DESCRIPTION

The 2SD1899-Z is designed for Audio Frequency Amplifier and

Switching, especially in Hybrid Integrated Circuits.

FEATURES

≤ 0.25 V

°C)

Collector to Base Voltage

60

V

Collector to Emitter Voltage

60

V

Base to Emitter Voltage

7.0

V

Collector Current (DC)

3.0

A

Collector Current (pulse)

Note 1

5.0

A

Base Current (DC)

0.5

A

2.0

W

°C)

10

W

Junction Temperature

150

°C

Storage Temperature

−55 to +150

°C

Notes 1. PW

≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 7.5 cm

PACKAGE DRAWING (Unit: mm)

12 3

4

6.5 ±0.2

4.4 ±0.2

5.0 ±0.2

0.5 ±0.1

0.5 ±0.1

2.3 ±0.2

0.5 ±0.1

Note

Note

0.15 ±0.15

2.3 ±0.3

2.3 ±0.3

TO-252 (MP-3Z)

1. Base

2. Collector

3. Emitter

4. Collector Fin

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.