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IRLU8259PbF 数据表(PDF) 2 Page - Kersemi Electronic Co., Ltd.

部件名 IRLU8259PbF
功能描述  High Frequency Synchronous Buck Converters for Computer Processor Power
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制造商  KERSEMI [Kersemi Electronic Co., Ltd.]
网页  http://www.kersemi.com
标志 KERSEMI - Kersemi Electronic Co., Ltd.

IRLU8259PbF 数据表(HTML) 2 Page - Kersemi Electronic Co., Ltd.

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IRLR/U8259PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
18
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
6.3
8.7
–––
10.6
12.9
VGS(th)
Gate Threshold Voltage
1.35
1.90
2.35
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-7.1
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
55
–––
–––
S
Qg
Total Gate Charge
–––
6.8
10
Qgs1
Pre-Vth Gate-to-Source Charge
–––
1.5
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.1
–––
nC
Qgd
Gate-to-Drain Charge
–––
2.4
–––
Qgodr
Gate Charge Overdrive
–––
1.8
–––
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
–––
3.5
–––
Qoss
Output Charge
–––
5.9
–––
nC
RG
Gate Resistance
–––
2.2
3.6
td(on)
Turn-On Delay Time
–––
8.4
–––
tr
Rise Time
–––
38
–––
td(off)
Turn-Off Delay Time
–––
9.1
–––
tf
Fall Time
–––
8.9
–––
Ciss
Input Capacitance
–––
900
–––
Coss
Output Capacitance
–––
300
–––
Crss
Reverse Transfer Capacitance
–––
110
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
™
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
(Body Diode)
ISM
Pulsed Source Current
–––
–––
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
17
26
ns
Qrr
Reverse Recovery Charge
–––
15
23
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
–––
VGS = 4.5V
Typ.
–––
–––
ID = 17A
VGS = 0V
VDS = 13V
RG = 1.8
TJ = 25°C, IF = 17A, VDD = 13V
di/dt = 200A/µs
e
TJ = 25°C, IS = 17A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
VDS = 13V, ID = 17A
VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5Ve
ID = 17A
VDS = 13V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 21A e
VGS = 4.5V, ID = 17A e
VGS = 20V
VGS = -20V
VDS = VGS, ID = 25µA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
Conditions
4.8
See Fig. 14
Max.
67
17
ƒ = 1.0MHz
m
56
f
230
µA
nA
ns
pF
A
2014-8-16
www.kersemi.com
2


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