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IRF1010E 数据表(PDF) 7 Page - International Rectifier

部件名 IRF1010E
功能描述  Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF1010E 数据表(HTML) 7 Page - International Rectifier

  IRF1010E Datasheet HTML 1Page - International Rectifier IRF1010E Datasheet HTML 2Page - International Rectifier IRF1010E Datasheet HTML 3Page - International Rectifier IRF1010E Datasheet HTML 4Page - International Rectifier IRF1010E Datasheet HTML 5Page - International Rectifier IRF1010E Datasheet HTML 6Page - International Rectifier IRF1010E Datasheet HTML 7Page - International Rectifier IRF1010E Datasheet HTML 8Page - International Rectifier  
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IRF1010E
www.irf.com
7
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by R
G
• I
SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

* Reverse Polarity of D.U.T for P-Channel
VGS
[
]
[
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[
] ***
Fig 14. For N-channel HEXFET® power MOSFETs


类似零件编号 - IRF1010E

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类似说明 - IRF1010E

制造商部件名数据表功能描述
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