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IRFB7440G 数据表(PDF) 8 Page - Kersemi Electronic Co., Ltd. |
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IRFB7440G 数据表(HTML) 8 Page - Kersemi Electronic Co., Ltd. |
8 / 8 page Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Fig 22b. Unclamped Inductive Waveforms Fig 22a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01 tp D.U.T L VDS + - VDD DRIVER A 15V 20V VGS Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel Power MOSFETs Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * + - + + + - - - RG VDD dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D.U.T Inductor Current D.U.T. VDS ID IG 3mA VGS .3 F 50K .2 F 12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - VDS 90% 10% VGS td(on) tr td(off) tf VDS Pulse Width µs Duty Factor RD VGS RG D.U.T. 10V + - VDD VGS IRFB7440GPBF 2014-8-13 8 www.kersemi.com |
类似零件编号 - IRFB7440G |
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类似说明 - IRFB7440G |
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