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IRF640NL 数据表(PDF) 7 Page - Kersemi Electronic Co., Ltd.

部件名 IRF640NL
功能描述  Advanced Process Technology
Download  11 Pages
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制造商  KERSEMI [Kersemi Electronic Co., Ltd.]
网页  http://www.kersemi.com
标志 KERSEMI - Kersemi Electronic Co., Ltd.

IRF640NL 数据表(HTML) 7 Page - Kersemi Electronic Co., Ltd.

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background image
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
ƒ
„
‚
RG
VDD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

*
IRF640N/S/L
2014-8-27
www.kersemi.com
7


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