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2SC3356 数据表(PDF) 2 Page - California Eastern Labs |
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2SC3356 数据表(HTML) 2 Page - California Eastern Labs |
2 / 9 page NE85633 / 2SC3356 7 f o 2 e g a P 0 0 . 3 . v e R 0 0 3 0 J E 1 2 0 0 S D 9 0 R Jun 28, 2011 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit s ci ts ir e tc a r a h C C D Collector Cut-off Current ICBO VCB = 10 V, IE 0 . 1 – – 0 = μ A Emitter Cut-off Current IEBO VEB = 1.0 V, IC 0 . 1 – – 0 = μ A h ni a G t n e rr u C C D FE Note 1 VCE = 10 V, IC = 20 mA 50 120 250 – s ci ts ir e tc a r a h C F R Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA – 7 – GHz Insertion Power Gain ⏐ S21e⏐2 VCE = 10 V, IC = 20 mA, f = 1 GHz – 11.5 – dB V F N e r u gi F e si o N CE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 2.0 dB Reverse Transfer Capacitance CreNote2 VCB = 10 V, IE = 0, f = 1 MHz − 0.55 1.0 pF Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank Q/YQ R/YR S/YS Marking R23 R24 R25 hFE Value 50 to 100 80 to 160 125 to 250 <R> A Business Partner of Renesas Electronics Corporation. |
类似零件编号 - 2SC3356 |
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类似说明 - 2SC3356 |
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