SI4946DY-HF datasheet(4/5 Pages) KEXIN

部件名	SI4946DY-HF

功能描述	Dual N-Channel MOSFET

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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4 / 5 page

SMD Type

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4

MOSFET

.

■

Typical Characterisitics

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.4

1

10

30

0

0.2

0.4

0.6

0.8

T J = 175 °C

VSD - Source-to-Drain Voltage (V)

1.2

T J = 25 °C

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

- 50

- 25

0

25

50

75

100

125

150

175

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.02

0.04

0.06

0.08

0.10

0

2

4

6

8

10

ID = 5.3 A

VGS - Gate-to-Source Voltage (V)

T J = 25 °C

T J = 150 °C

0

15

25

5

10

Time (s)

20

10

1000

1

0.1

0

1

0

.

0

Safe Operating Area, Junction-to-Ambient

100

1

0

1

0

1

0

.

0

0.01

10

0.1

1 ms

10 ms

100 ms

Limited by RDS(on) *

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

TA = 25 °C

Single Pulse

100 µs

DC

10 s

1 s

Single Pulse Avalanche Capability

100

1

0

.

0

1

0

.

0

1

10

0.0001

TA - Time In Avalanche (s)

T

A =

L · I

D

BV - V

DD

0.00001

Dual N-Channel MOSFET

SI4946DY-HF (KI4946DY-HF)

类似零件编号 - SI4946DY-HF

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