SI4558DY-HF datasheet(3/6 Pages) KEXIN

部件名	SI4558DY-HF

功能描述	Complementary Trench MOSFET

Download	6 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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3 / 6 page

SMD Type

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3

MOSFET

0

6

12

18

24

30

0

1

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3

4

5

s

c

it

s

ir

e

t

c

a

r

a

h

C

r

e

f

s

n

a

r

T

s

c

it

s

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t

c

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C

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Gate Charge

On-Resistance vs. Drain Current

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

Qg – Total Gate Charge (nC)

VDS – Drain-to-Source Voltage (V)

ID – Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

TJ – Junction Temperature (。C)

0

2

4

6

8

10

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4

8

12

16

0

0.4

0.8

1.2

1.6

2.0

–50

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50

100

150

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0.025

0.050

0.075

0.100

0.125

0.150

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30

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1500

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–55 C

VGS = 10 V

Crss

Coss

Ciss

VGS = 4.5 V

TC = 125。C

VDS = 15 V

ID = 6 A

VGS = 10 V

ID = 6 A

25 C

4 V

3 V

VGS = 10, 9, 8, 7, 6, 5 V

。

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N-MOSFET Typical Characterisitics

Complementary Trench MOSFET

SI4558DY-HF (KI4558DY-HF)

类似零件编号 - SI4558DY-HF

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	SI4558DY-T1-E3	1Mb / 14P	N- and P-Channel 30 V (D-S) MOSFET

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