2SC1008_15 datasheet(1/1 Pages) SECOS

部件名	2SC1008

功能描述	NPN Plastic Encapsulated Transistor

Download	1 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 1 page

2SC1008

0.7A , 80 V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

14-Feb-2011 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

C

E

K

F

D

B

G

H

J



Base



Emitter

Collector



RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



General Purpose Switching and Amplification.

CLASSIFICATION OF hFE

Product-Rank

2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G

Range

40~80

70~140

120~240

200~400

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

80

V

Collector to Emitter Voltage

VCEO

60

V

Emitter to Base Voltage

VEBO

8

V

Collector Current - Continuous

IC

0.7

A

Collector Power Dissipation

PC

800

mW

Thermal Resistance From Junction to Ambient

RθJA

156

°C / W

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test condition

Collector to Base Breakdown Voltage

V(BR)CBO

80

-

V

IC=0.1mA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

60

-

V

IC=10mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

8

-

V

IE=0.01mA, IC=0

Collector Cut-Off Current

ICBO

-

0.1

μA

VCB=60V, IE=0

Emitter Cut-Off Current

IEBO

-

0.1

μA

VEB=5V, IC=0

DC Current Gain

hFE

40

-

400

VCE=2V, IC=50mA

Collector to Emitter Saturation Voltage

VCE(sat)

-

0.4

V

IC=500mA, IB=50mA

Base to Emitter Voltage

VBE(sat)

-

1.1

V

IC=500mA, IB=50mA

Transition Frequency

fT

30

-

MHz

VCE=10V, IC=50mA

Collector Output Capacitance

Cob

-

8

-

pF

VCB=10V, IC=0, f=1MHz

TO-92

REF.

Millimeter

Min.

Max.

A

4.40

4.70

B

4.30

4.70

C

12.70

-

D

3.30

3.81

E

0.36

0.56

F

0.36

0.51

G

1.27 TYP.

H

1.10

-

J

2.42

2.66

K

0.36

0.76



Emitter



Base



Collector

类似零件编号 - 2SC1008_15

制造商	部件名	数据表	功能描述
Micro Commercial Compon...	2SC1008-G	472Kb / 2P	NPN Silicon Epitaxial Transistor
	2SC1008-G	584Kb / 2P	NPN Silicon Epitaxial Transistor
	2SC1008-O	472Kb / 2P	NPN Silicon Epitaxial Transistor
	2SC1008-O	584Kb / 2P	NPN Silicon Epitaxial Transistor
	2SC1008-R	472Kb / 2P	NPN Silicon Epitaxial Transistor

More results

类似说明 - 2SC1008_15

制造商	部件名	数据表	功能描述
SeCoS Halbleitertechnol...	D882S	214Kb / 2P	NPN Plastic Encapsulated Transistor
	2N5832	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2N6517	142Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1008	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1318A	135Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC1923	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2N5172	81Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC4548	77Kb / 1P	NPN Plastic Encapsulated Transistor
	2SBA42	74Kb / 1P	NPN Plastic Encapsulated Transistor
	2SD1468S	52Kb / 1P	NPN Plastic-Encapsulated Transistor
	BD135	85Kb / 2P	NPN Plastic Encapsulated Transistor