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2SC2873 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2873 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 3 page FEATURES Low saturation voltage High speed switching time Complementary to 2SA1213 MAXIMUM RATINGS (TA=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA , IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE1 VCE=2V, IC=500mA 70 240 DC current gain hFE2 VCE=2V, IC=2A 40 Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A, IB=50mA 1.2 V Transition frequency fT VCE=2V, IC=500mA 120 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF Turn on Time ton 0.1 Storage Time tstg 1.0 Switching Time Fall Time tf VCC=30V, IC=1A, IB1=-IB2=0.05A 0.1 μs CLASSIFICATION OF hFE(1) Rank O Y Range 70-140 120-240 Marking MO MY Any changing of specification will not be informed individual 2SC2873 NPN Silicon Epitaxial Planar Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente 08-May-2007 Rev. A Page 1 of 3 SOT-89 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 q TYP. M 0.70 REF. |
类似零件编号 - 2SC2873_15 |
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类似说明 - 2SC2873_15 |
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