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SI2335DS-3 数据表(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 SI2335DS-3
功能描述  P-Channel Enhancement MOSFET
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2335DS-3 数据表(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd

  SI2335DS-3 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd SI2335DS-3 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd SI2335DS-3 Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd SI2335DS-3 Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd  
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3
MOSFET
P-Channel Enhancement MOSFET
SI2335DS (KI2335DS)
Typical Characterisitics
0
3
6
9
12
15
0.0
0.5
1.0
1.5
2.0
2.5
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0
3
6
9
12
15
0
3
6
9
12
15
0
2
4
6
8
10
0
2
4
6
8
0
5
10
15
20
0.6
0.8
1.0
1.2
1.4
1.6
–50
–25
0
25
50
75
100
125
150
VGS = 4.5 thru 2.5 V
25 C
Crss
Coss
Ciss
VDS = 6 V
ID = 4.0 A
VGS = 4.5 V
ID = 4.0 A
VGS = 4.5 V
VGS = 2.5 V
1, 0.5 V
125 C
1.5 V
s
c
it
s
ir
e
t
c
a
r
a
h
C
r
e
f
s
n
a
r
T
s
c
it
s
ir
e
t
c
a
r
a
h
C
t
u
p
t
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O
Gate Charge
On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ – Junction Temperature ( C)
VGS = 1.8 V
2 V
0
500
1000
1500
2000
0
3
6
9
12
TC = –55 C


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