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SI2335DS 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 SI2335DS
功能描述  P-Channel Enhancement MOSFET
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2335DS 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  SI2335DS Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd SI2335DS Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd SI2335DS Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd SI2335DS Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
1
MOSFET
P-Channel Enhancement MOSFET
SI2335DS (KI2335DS)
■
Features
●
VDS (V) =-12V
●
ID =-4.0A (VGS =-4.5V)
●
RDS(ON) ＜ 51mΩ (VGS =-4.5V)
●
RDS(ON) ＜ 70mΩ (VGS =-2.5V)
●
RDS(ON) ＜ 106mΩ (VGS =-1.8V)
0.4 +0.1
-0.1
2.9 +0.1
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.1
1.Gate
2.Source
3.Drain
1
2
3
Unit: mm
SOT-23
0.1 +0.05
-0.01
G
S
D
2
3
1
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Ta = 25℃
-4.0
-3.2
Ta = 70℃
-3.3
-2.6
Pulsed Drain Current
IDM
Power Dissipation
Ta = 25℃
1.25
0.75
Ta = 70℃
0.8
0.48
Thermal Resistance.Junction- to-Ambient t≤5 sec
Steady State
Thermal Resistance.Junction- to-Foot
RthJF
Junction Temperature
TJ
Storage Temperature Range
Tstg
℃
100
166
50
150
-55 to 150
W
RthJA
-12
±
8
ID
V
℃
/W
A
-15
PD


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