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SI2309DS-HF-3 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2309DS-HF-3 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 5 page SMD Type www.kexin.com.cn 2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -60 V VDS=-48V, VGS=0V -1 VDS=-48V, VGS=0V, TJ=125℃ -50 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1 -3 V VGS=-10V, ID=-1.25A 340 VGS=-4.5V, ID=-1A 550 On state drain current *1 ID(ON) VGS=-4.5V, VDS=-10V -6 A Forward Transconductance *1 gFS VDS=-4.5V, ID=-1A 1.9 S Total Gate Charge Qg 5.4 12 Gate Source Charge Qgs 1.15 Gate Drain Charge Qgd 0.92 Turn-On DelayTime td(on) 10.5 20 Turn-On Rise Time tr 11.5 20 Turn-Off DelayTime td(off) 15.5 30 Turn-Off Fall Time tf 7.5 15 Body Diode Reverse Recovery Time trr IF=-1.25A, dI/dt=100A/μs 30 55 Maximum Body-Diode Continuous Current IS -1.25 A Diode Forward Voltage VSD IS=-1.25A,VGS=0V -0.82 -1.2 V nC VGS=-4.5V, VDS=-30V, RL=30Ω,RGEN=6Ω ID=-1A ns Zero Gate Voltage Drain Current IDSS μ A mΩ RDS(On) Static Drain-Source On-Resistance *1 VGS=-10V, VDS=-30V, ID=-1.25A *1 Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%. ■ Marking Marking A9* F P-Channel MOSFET SI2309DS-HF (KI2309DS-HF) |
类似零件编号 - SI2309DS-HF-3 |
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类似说明 - SI2309DS-HF-3 |
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