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SI2301BDS-HF-3 数据表(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2301BDS-HF-3 数据表(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
4 / 5 page SMD Type www.kexin.com.cn 4 MOSFET . ■ Typical Characterisitics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 T J = 150 C Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Square Wave Pulse Duration (sec) VSD V ) V ( e g a tl o V n i a r D - o t- e c r u o S - GS - Gate-to-Source Voltage (V) T J - Temperature ( ) c e s ( e m i T ) C ID = 2.8 A ID = 250 A 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 T J = 25 C 1 TA = 25 C Safe Operating Area VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 0.1 10 s 100 s 1 ms 10 ms 100 ms TA = 25 C Single Pulse 10 8 6 4 2 0 0.01 0.1 1 10 100 1000 dc, 100 s, 10 s, 1 s P-Channel MOSFET SI2301BDS-HF (KI2301BDS-HF) |
类似零件编号 - SI2301BDS-HF-3 |
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类似说明 - SI2301BDS-HF-3 |
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