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IRFD120 数据表(PDF) 2 Page - Intersil Corporation |
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IRFD120 数据表(HTML) 2 Page - Intersil Corporation |
2 / 6 page 4-276 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRFD120 UNITS Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 100 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 1.3 A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 5.2 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 1.0 W Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.008 W/oC Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 36 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 9) 100 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) Max, VGS = 10V 1.3 - - A Gate Source Leakage IGSS VGS = ±20V - - ±500 nA Drain Source On Resistance (Note 2) rDS(ON) ID = 0.6A, VGS = 10V (Figures 7, 8) - 0.25 0.30 Ω Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = 0.6A (Figure 11) 0.9 1.0 - S Turn-On Delay Time td(ON) VDD = 0.5 x Rated BVDSS, ID ≈ 1.3A, VGS = 10V, RG = 9.1Ω RL = 38.5Ω for VDD = 50V MOSFET Switching Times are Essentially Independent of Operating Temperature -20 40 ns Rise Time tr -35 70 ns Turn-Off Delay Time td(OFF) - 50 100 ns Fall Time tf -35 70 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 1.3A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figure 13) Gate Charge is Essentially Independent of Operating Temperature -11 15 nC Gate to Source Charge Qgs - 6.0 - nC Gate to Drain “Miller” Charge Qgd - 5.0 - nC Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1MHz (Figure 10) - 450 - pF Output Capacitance COSS - 200 - pF Reverse Transfer Capacitance CRSS -50 - pF Internal Drain Inductance LD Measured From the Drain Lead, 2mm (0.08in) from Package to Center of Die Modified MOSFET Symbol Showing the Internal Device’s Inductances - 4.0 - nH Internal Source Inductance LS Measured From the Source Lead, 2mm (0.08in) from Header to Source Bonding Pad - 6.0 - nH Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 120 oC/W LS LD G D S IRFD120 |
类似零件编号 - IRFD120 |
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类似说明 - IRFD120 |
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