IRF610 datasheet(4/7 Pages) INTERSIL

部件名	IRF610

功能描述	3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET

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制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

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4 / 7 page

4-193

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

0.1

10

1

100

DC

100

µs

10ms

1

1000

TJ = 150

oC SINGLE PULSE

TC = 25

oC

10

µs

1ms

LIMITED BY rDS(ON)

AREA MAY BE

OPERATION IN THIS

VDS, DRAIN TO SOURCE VOLTAGE (V)

0

020

40

60

80

1

2

3

4

5

100

VGS = 10V

VGS = 7V

VGS = 8V

VGS = 6V

VGS = 5V

VGS = 4V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

0

1

0

2

46

10

2

3

VDS, DRAIN TO SOURCE VOLTAGE (V)

4

8

5

VGS = 5V

VGS = 10V

VGS = 8V

VGS = 7V

VGS = 6V

VGS = 4V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

02

4

6

8

10

TJ = 150

oC

TJ = 25

oC

10

1

0.1

10-2

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VDS ≥ 50V

15

12

9

6

3

0

024

6

8

10

ID, DRAIN CURRENT (A)

VGS = 10V

VGS = 20V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

3.0

2.4

1.8

1.2

0.6

0

-60

-40

-20

0

20

40

60

80

100

120 140 160

TJ, JUNCTION TEMPERATURE (

oC)

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VGS = 10V, ID = 3.2A

IRF610

类似零件编号 - IRF610

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	IRF610	148Kb / 5P	N-Channel Power MOSFETs, 3.5A, 150-200V
Vishay Siliconix	IRF610	594Kb / 8P	Power MOSFET Rev. A, 16-Jun-08
New Jersey Semi-Conduct...	IRF610	113Kb / 3P	N-Channel Power MOSFETs 3.5 A, 150-200 V
New Jersey Semi-Conduct...	IRF610	113Kb / 3P	N-Channel Power MOSFETs 3.5 A, 150-200 V
Inchange Semiconductor ...	IRF610	45Kb / 2P	isc N-Channel MOSFET Transistor

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类似说明 - IRF610

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	2N6784	90Kb / 7P	2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET
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	IRF830	56Kb / 7P	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
Harris Corporation	BUZ41A	45Kb / 5P	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
Intersil Corporation	IRFR9220	99Kb / 8P	3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
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