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IRF350 数据表(PDF) 4 Page - Intersil Corporation |
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IRF350 数据表(HTML) 4 Page - Intersil Corporation |
4 / 7 page 4 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE Typical Performance Curves Unless Otherwise Specified (Continued) 10 1.0 10 100 0.1 VDS, DRAIN TO SOURCE VOLTAGE (V) 500 100 1 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) TJ = MAX RATED SINGLE PULSE TC = 25 oC 1ms 10ms DC 100ms 100 µs 10 µs 25 50 20 200 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 100 150 200 0 250 20 16 12 0 8 PULSE DURATION = 80 µs 4 VGS = 6.0V VGS = 3.5V 300 VGS = 5.5V VGS = 5.0V VGS = 4.5V VGS = 4.0V VDS, DRAIN TO SOURCE VOLTAGE (V) 12 3 4 05 10 8 6 0 4 PULSE DURATION = 80 µs 2 VGS = 5.0V VGS = 4.0V VGS = 10V VGS = 3.5V VGS = 4.5V VGS, GATE TO SOURCE VOLTAGE (V) 12 10 4 0 0 123 78 TJ = 125 oC TJ = 25 oC PULSE DURATION = 80 µs VDS > ID(ON) x rDS(ON)MAX 8 6 2 6 45 TJ = -55 oC 40 ID, DRAIN CURRENT (A) 10 20 30 050 0.8 0.7 0.6 0 0.5 VGS = 20V 0.4 VGS = 10V 0.3 0.2 60 70 rDS(ON) MEASURED WITH CURRENT PULSE OF 2.0 µs DURATION. INITIAL TJ = 25oC. (HEATING EFFECT OF 2.0 µs PULSE IS MINIMAL) 0 2.2 1.4 0.6 80 TJ, JUNCTION TEMPERATURE ( oC) 1.8 1.0 0.2 120 ID = 8A -40 40 VGS = 10V 160 IRF350 |
类似零件编号 - IRF350 |
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类似说明 - IRF350 |
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