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IRF247 数据表(PDF) 2 Page - Intersil Corporation

部件名 IRF247
功能描述  14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
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制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation

IRF247 数据表(HTML) 2 Page - Intersil Corporation

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5-2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRF244
IRF245
IRF246
IRF247
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS
250
250
275
275
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR
250
250
275
275
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
14
13
14
13
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
8.8
8.0
8.8
8.0
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM
56
52
56
52
A
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
±20
±20
V
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD
125
125
125
125
W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
1.0
1.0
1.0
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS
550
550
550
550
mJ
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG
-55 to 150
-55 to 150
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . TL
Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .Tpkg
300
260
300
260
300
260
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
(Figure 10)
IRF244, IRF245
250
-
-
V
IRF246, IRF247
275
-
-
V
Gate to Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
IRF244, IRF246
14
-
-
A
IRF245, IRF247
13
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On-State Resistance (Note 2)
rDS(ON)
VGS = 10V, ID = 8A, (Figures 8, 9)
IRF244, IRF246
-
0.20
0.28
IRF245, IRF247
-
0.24
0.34
Forward Transconductance (Note 2)
gfs
VDS ≥ 50V, ID = 8A, (Figure 12)
6.7
10
-
S
Turn-On Delay Time
td(ON)
VDD = 125V, ID ≈ 14A, RG = 9.1Ω, RL = 8.9Ω
(Figures 17, 18) MOSFET Switching Times
are Essentially Independent of Operating
Temperature
-16
24ns
Rise Time
tr
-
67
100
ns
Turn-Off Delay Time
td(OFF)
-53
80ns
Fall Time
tf
-49
74ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID = 14A, VDS = 0.8 x Rated
BVDSS, Ig(REF) = 1.5mA,
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
-39
59
nC
Gate to Source Charge
Qgs
-
6.6
-
nC
Gate to Drain “Miller” Charge
Qgd
-20-
nC
IRF244, IRF245, IRF246, IRF247


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