1

Semiconductor

October 1997

Features

• 4.0A and 5.0A, 150V and 200V

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Formerly developmental type TA09600.

Symbol

Packaging

JEDEC TO-204AA

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF220

TO-204AA

IRF220

IRF221

TO-204AA

IRF221

IRF222

TO-204AA

IRF222

IRF223

TO-204AA

IRF223

NOTE: When ordering, use the entire part number.

G

D

S

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright

File Number

1567.2

IRF220, IRF221,

IRF222, IRF223

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,

N-Channel Power MOSFETs