2SJ179_15 datasheet(1/4 Pages) KEXIN

部件名	2SJ179

功能描述	P-Channel MOSFET

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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MOSFET

P-Channel MOSFET

2SJ179

■

Features

●

VDS (V) =-30V

●

ID =-1.5 A (VGS =-10V)

●

RDS(ON) ＜ 1Ω (VGS =-10V)

●

RDS(ON) ＜ 1.5Ω (VGS =-4V)

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-30

Gate-Source Voltage

VGS

±

20

Continuous Drain Current

ID

-1.5

Pulsed Drain Current (Note.1)

IDM

-3

Power Dissipation

PD

2

W

Junction Temperature

TJ

150

Junction Storage Temperature Range

Tstg

-55 to 150

V

A

℃

Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-30

V

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-10

uA

Gate-Body leakage current

IGSS

VDS=0V, VGS=±20V

±

100

nA

Gate Cut off Voltage

VGS(off)

VDS=-10V,ID=-1mA

-1

-3

V

VGS=-4V, ID=-500mA

1.5

VGS=-10V, ID=-500mA

1

Forward Transconductance

gFS

VDS=-10V, ID=-500mA

0.4

S

Input Capacitance

Ciss

210

Output Capacitance

Coss

130

Reverse Transfer Capacitance

Crss

3

Turn-On DelayTime

td(on)

35

Turn-On Rise Time

tr

70

Turn-Off DelayTime

td(off)

380

Turn-Off Fall Time

tf

200

Static Drain-Source On-Resistance

RDS(On)

Ω

VGS(on)=-10V, VDS=-25V, ID=-0.5A,

RL=50Ω,RGEN=10Ω

ns

VGS=0V, VDS=-10V, f=1MHz

pF

■

Marking

PA

1.Gate

2.Drain

3.Source

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