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2SK2857-HF 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK2857-HF 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 4 page SMD Type www.kexin.com.cn 2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 60 V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ± 10 uA Gate Cutt-off Voltage VGS(off) VDS=10V , ID=1mA 1 2 V VGS=10V, ID=2.5A 150 VGS=4V, ID=1.5A 220 Forward Transconductance gFS VDS=10V, ID=2A 1 S Input Capacitance Ciss 265 Output Capacitance Coss 125 Reverse Transfer Capacitance Crss 56 Total Gate Charge Qg 10.6 Gate to Source Charge QgS 0.7 Gate to Drain Charge Qgd 3.5 Turn-On DelayTime td(on) 8 Turn-On Rise Time tr 11 Turn-Off DelayTime td(off) 52 Turn-Off Fall Time tf 22 Body Diode Reverse Recovery Time trr 49 Body Diode Reverse Recovery Charge Qrr 26.6 nC Diode Forward Voltage VSD IS=4A,VGS=0V 0.86 V IF= 4A,VGS=0, dI/dt= 50 A/μs Static Drain-Source On-Resistance VGS=0V, VDS=10V, f=1MHz pF mΩ VGS(on)=10V, VDS=25V, ID=1A,RL=25Ω,RG=10Ω RDS(On) VDS = 48 V,VGS = 10 V,ID = 4 A nC ns ■ Marking Marking NX F N-Channel MOSFET 2SK2857-HF |
类似零件编号 - 2SK2857-HF |
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类似说明 - 2SK2857-HF |
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