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MTB09N06Q8 数据表(PDF) 2 Page - Cystech Electonics Corp. |
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MTB09N06Q8 数据表(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C912Q8 Issued Date : 2014.07.24 Revised Date : Page No. : 2/9 MTB09N06Q8 CYStek Product Specification Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Continuous Drain Current @VGS=10V, TC=25C (Note 1) ID 18.0 A Continuous Drain Current @VGS=10V,TC=100C (Note 1) 12.7 Continuous Drain Current @VGS=10V,TA=25C (Note 2) 12.0 Continuous Drain Current @VGS=10V,TA=70C (Note 2) 9.6 Pulsed Drain Current IDM 72 Avalanche Current IAS 40 Avalanche Energy @ L=0.1mH, ID=40A, RG=25Ω (Note 2) EAS 80 mJ Repetitive Avalanche Energy @ L=0.05mH (Note 3) EAR 0.6 Total Power Dissipation TC=25℃ (Note 1) PD 6 W TC=100℃ (Note 1) 3 TA=25℃ (Note 2) 2.5 TA=70℃ (Note 2) 1.6 Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 25 C/W Thermal Resistance, Junction-to-ambient, max (Note 2) Rth,j-a 50 Note : 1 .The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3 . Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. Characteristics (TC=25 C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 60 - - V VGS=0V, ID=250μA ∆BVDSS/∆Tj - 0.1 - V/ C Reference to 25 C, ID=250μA VGS(th) 1.0 - 2.5 V VDS = VGS, ID=250μA GFS *1 - 30 - S VDS =5V, ID=10A IGSS - - ±100 nA VGS=±20V IDSS - - 1 μA VDS =48V, VGS =0V - - 25 VDS =48V, VGS =0V, Tj=125 C RDS(ON) *1 - 7.3 11 mΩ VGS =10V, ID=12A - 8.4 14 mΩ VGS =4.5V, ID=10A |
类似零件编号 - MTB09N06Q8 |
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类似说明 - MTB09N06Q8 |
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