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2SK2110-HF 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 2SK2110-HF
功能描述  N-Channel MOSFET
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SK2110-HF 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SK2110-HF Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SK2110-HF Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd 2SK2110-HF Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
1
MOSFET
Features
VDS (V) = 100V
ID = 0.5 A
RDS(ON) < 1.2Ω (VGS = 10V)
RDS(ON) < 1.5Ω (VGS = 4V)
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±
20
Continuous Drain Current
ID
0.5
Pulsed Drain Current
(Note.1)
IDM
1
Power Dissipation
PD
2
W
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
A
Note.1: PW ≤ 10ms, Duty Cycle ≤ 50%
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=250μA, VGS=0V
100
V
Zero Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0V
1
uA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
±
10
uA
Gate Cutt-off Voltage
VGS(off)
VDS=10V , ID=1mA
0.8
2
V
VGS=10V, ID=0.3A
1.2
VGS=4V, ID=0.3A
1.5
Forward Transconductance
gFS
VDS=10V, ID=0.3A
0.4
S
Input Capacitance
Ciss
100
Output Capacitance
Coss
38
Reverse Transfer Capacitance
Crss
10
Turn-On DelayTime
td(on)
2
Turn-On Rise Time
tr
1.3
Turn-Off DelayTime
td(off)
38
Turn-Off Fall Time
tf
13
Static Drain-Source On-Resistance
VGS=0V, VDS=10V, f=1MHz
pF
ns
Ω
VGS(on)=10V, VDS=25V,
ID=300 mA,RL=83Ω,RG=10Ω
RDS(On)
Marking
Marking
NT F
1.Gate
2.Drain
3.Source
Pb−Free Package May be Available.
The G−Suffix Denotes a Pb−Free Lead Finish
N-Channel MOSFET
2SK2110-HF


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