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2SK2033-3 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK2033-3 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 MOSFET N-Channel MOSFET 2SK2033 ■ Features ● VDS (V) = 20V ● ID = 100mA ● RDS(ON) < 12Ω (VGS = 2.5V) ● Low threshold voltage: Vth = 0.5~1.5 V ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 10 Continuous Drain Current ID 100 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 20 V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±10V ± 1 uA Gate threshold voltage VGS(th) VDS=3V ID=100uA 0.5 1.5 V Static Drain-Source On-Resistance RDS(On) VGS=2.5V, ID=10mA 12 Ω Forward Transconductance gFS VDS=3V, ID=10mA 25 50 ms Input Capacitance Ciss 8.5 Output Capacitance Coss 3.3 Reverse Transfer Capacitance Crss 9.3 Turn-On DelayTime td(on) 160 Turn-Off DelayTime td(off) 150 pF VGS=0~2.5V, VDS=3V, ID=10mA VGS=0V, VDS=3V, f=1MHz ns ■ Marking Marking KP 1. Gate 2. Source 3. Drain 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 0.15 +0.02 -0.02 |
类似零件编号 - 2SK2033-3 |
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类似说明 - 2SK2033-3 |
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